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| RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes RHRU5070, RHRU5080, RHRU5090 and RHRU50100 (TA49066) are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Ordering Information PACKAGING AVAILABILITY PART NUMBER RHRU5070 RHRU5080 RHRU5090 RHRU50100 PACKAGE TO-218 TO-218 TO-218 TO-218 BRAND RHRU5070 RHRU5080 RHRU5090 RHRU50100 * General Purpose Package JEDEC STYLE TO-218 ANODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU5080 800 800 800 50 100 500 150 40 -65 to +175 RHRU5090 RHRU50100 UNITS 900 1000 V 900 1000 V 900 1000 V 50 50 A 100 500 150 40 -65 to +175 100 500 150 40 -65 to +175 A A W mj oC RHRU5070 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 700 Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 700 DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 700 Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 50 (TC = +65oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 100 (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 500 (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . TSTG , TJ -65 to +175 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU5070, RHRU5080, RHRU5090, RHRU50100 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU5070 SYMBOL VF TEST CONDITION IF = 50A, TC = +25oC IF = 50A, TC = +150oC IR VR = 700V, TC = +25oC VR = 800V, TC = +25oC VR = 900V, TC = +25oC VR = 1000V, TC = +25oC IR VR = 700V, TC = +150oC VR = 800V, TC = +150oC VR = 900V, TC = +150oC VR = 1000V, TC = +150oC tRR IF = 1A, dIF /dt = 100A/s IF = 50A, dIF /dt = 100A/s tA tB QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB . tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figure 10 and Figure 11). pw = Pulse width. D = Duty cycle. IF = 50A, dIF /dt = 100A/s IF = 50A, dIF /dt = 100A/s IF = 50A, dIF /dt = 100A/s VR = 10V, IF = 0A MIN TYP 54 32 125 150 MAX 3.0 2.5 500 3.0 75 95 1.0 RHRU5080 MIN TYP 54 32 125 150 MAX 3.0 2.5 500 3.0 75 95 1.0 RHRU5090 MIN TYP 54 32 125 150 MAX 3.0 2.5 500 3.0 75 95 1.0 RHRU50100 MIN TYP 54 32 125 150 MAX 3.0 2.5 500 3.0 75 95 1.0 UNITS V V A A A A mA mA mA mA ns ns ns ns nC pF oC/W V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF /dt L1 = SELF INDUCTANCE OF R1 R4 + LLOOP Q1 +V1 0 t2 t1 R2 +V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 L LOOP 0 Q4 DUT 0.25 IRM IRM C1 R4 IF dIF dt tRR tA tB t3 0 -V2 R3 Q3 -V4 VRM VR FIGURE 1. tRR TEST CIRCUIT FIGURE 2. WAVEFORMS AND DEFINITIONS 2 RHRU5070, RHRU5080, RHRU5090, RHRU50100 Typical Performance Curves 250 100 3000 1000 IF, FORWARD CURRENT - (A) IR , REVERSE CURRENT - (A) +175oC 100 +100oC 10 +175oC 10 +100oC +25oC 1 +25oC 0.1 1 0 0.5 1 1.5 2 2.5 3 3.5 4 0.01 0 200 400 600 800 1000 VF, FORWARD VOLTAGE - (V) VR , REVERSE VOLTAGE - (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 TC = +25oC FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 200 TC = +100oC t, RECOVERY TIMES - (ns) 80 tRR t, RECOVERY TIMES - (ns) 150 tRR 60 tA 40 tB 10 100 tA 50 tB 0 1 0 10 IF, FORWARD CURRENT - (A) 50 1 10 IF , FORWARD CURRENT - (A) 50 FIGURE 5. TYPICAL tRR , tA AND tB CURVES vs FORWARD CURRENT AT +25oC TC = +175oC 400 FIGURE 6. TYPICAL tRR , tA AND tB CURVES vs FORWARD CURRENT AT +100oC 50 IF (AV) , AVERAGE FORWARD CURRENT - (A) t, RECOVERY TIMES - (ns) 300 tRR 200 tA 100 tB 40 DC 30 SQ. WAVE 20 10 0 1 10 IF , FORWARD CURRENT - (A) 50 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE - (oC) FIGURE 7. TYPICAL tRR , tA AND t B CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 3 RHRU5070, RHRU5080, RHRU5090, RHRU50100 Typical Performance Curves 500 CJ , JUNCTION CAPACITANCE (pF) (Continued) 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETS Q1 L R + 130 1M DUT VDD 12V Q2 IL 130 CURRENT SENSE VAVL - IV 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4 |
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